Local Analysis of Silicon Wafer Metal Contamination



Metal contamination in a given location specified on a bare silicon wafer* is analyzed.

  • After VPD (vapor phase decomposition), the sampling of a given location specified by use of automatic recovery equipment (SC-3000 available from NAS) is carried out.
  • Our system is capable of handling 150~300mm silicon wafers.
  • Analytical method: Inductively coupled plasma mass spectrometry (ICP-MS method)
    * For consultation about thick film or any films other than SiO2 film, please contact us.

Example of local analysis of wafers

Lower determination limits (in the case of determination of 4 elements in 200mm bare silicon wafer)*1

  Whole area
Periphery 10mm
Bevel part
(pg) (atoms/cm2)*2
Na 3E+08 2E+09 10 3E+10
Al 3E+08 2E+09 10 2E+10
Ca 2E+08 1E+09 10 2E+10
Fe 1E+08 8E+08 10 1E+10

*1: Lower determination limits differ with the sampling area and the number of the elements to be measured.

*2: Converted value in the case where the dissolved area was assumed to be 725μm in wafer thickness and 62.8cm in circumference. (Fore reference)

Search Number 3017

Download The Technical Note of This Exapmle.

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